BEE Semiconductor Devices and Electronics 2

Question 1

In a p-n junction diode under forward bias, the depletion region width:

Accepted Answer

Decreases

Answer

Forward bias reduces the built-in electric field, causing the depletion region to narrow.

Question 2

The Early effect in a BJT refers to:

Accepted Answer

Base width modulation due to collector-base voltage

Answer

The Early effect describes how increasing collector-base reverse bias narrows the base width, increasing collector current.

Question 3

Which parameter describes the ratio of drain current change to gate-source voltage change in a MOSFET?

Accepted Answer

Transconductance (gm)

Answer

Transconductance gm = ∂ID/∂VGS quantifies how effectively gate voltage controls drain current.

Question 4

A Zener diode is primarily used in which region of its I-V characteristic?

Accepted Answer

Reverse breakdown region

Answer

Zener diodes are designed to operate in reverse breakdown, maintaining a nearly constant voltage.

Question 5

In an n-channel JFET, pinch-off occurs when the gate-source voltage VGS equals:

Accepted Answer

The pinch-off voltage VP (negative)

Answer

Pinch-off in a JFET occurs when VGS equals the negative pinch-off voltage VP, fully depleting the channel.

BEE - Bachelor of Electrical Engineering Practice Test