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Solar PV Fundamentals Flashcards

7 cards from real NABCEP practice questions. Tap to flip, then mark Knew It or Still Learning — missed cards come back until you master them.

Read the first 7 Solar PV Fundamentals flashcards as text
  1. What is the theoretical maximum efficiency limit for a single-junction silicon PV cell under unconcentrated sunlight, known as the Shockley-Queisser limit?

    Answer: Around 29–33%

    The Shockley-Queisser limit for a single p-n junction under AM1.5 illumination is approximately 29–33%, due to thermalization and transmission losses.

  2. What does NOCT stand for and how is it used in PV module performance estimation?

    Answer: Normal Operating Cell Temperature — used to estimate cell temperature under realistic outdoor conditions

    NOCT is the cell temperature at 800 W/m², 20°C ambient, and 1 m/s wind; it is used to estimate real-world operating temperatures.

  3. What happens to minority carrier lifetime when a silicon solar cell has higher impurity or defect concentrations?

    Answer: Minority carrier lifetime decreases, increasing recombination and reducing efficiency

    Defects and impurities create recombination centers that reduce minority carrier lifetime, lowering open-circuit voltage and efficiency.

  4. Which type of charge carrier moves from the p-type to n-type layer across the depletion region in an illuminated p-n junction solar cell?

    Answer: Photo-generated electrons are swept from p-type to n-type by the built-in electric field

    The built-in electric field at the depletion region sweeps photo-generated minority electrons from the p-side to the n-side, generating current.

  5. When comparing bifacial PV modules to monofacial modules, what is the primary performance advantage of bifacial modules?

    Answer: Additional energy generation from reflected or diffuse light hitting the rear surface

    Bifacial modules generate additional power from albedo (reflected) light incident on the rear cell surface, boosting total energy yield.

  6. What is potential-induced degradation (PID) in PV modules and how is it typically mitigated?

    Answer: Electrochemical leakage current degrading cells — mitigated by grounding, module selection, or anti-PID inverter settings

    PID is caused by high-voltage leakage currents through the module's glass and frame, which can be mitigated by grounding strategy, PID-resistant modules, or inverter voltage offset settings.

  7. What is the significance of the bandgap energy of a PV semiconductor material?

    Answer: It sets the minimum photon energy needed to generate an electron-hole pair, affecting what portion of the solar spectrum is used

    The bandgap energy determines the threshold photon wavelength; photons with less energy pass through unused, while excess energy is lost as heat.