Semiconductor Devices and Electronics Flashcards
7 cards from real BEE practice questions. Tap to flip, then mark Knew It or Still Learning — missed cards come back until you master them.
Read the first 7 Semiconductor Devices and Electronics flashcards as text
In a p-n junction diode under forward bias, the depletion region width:
Answer: Decreases
Forward bias reduces the built-in electric field, causing the depletion region to narrow.
The Early effect in a BJT refers to:
Answer: Base width modulation due to collector-base voltage
The Early effect describes how increasing collector-base reverse bias narrows the base width, increasing collector current.
Which parameter describes the ratio of drain current change to gate-source voltage change in a MOSFET?
Answer: Transconductance (gm)
Transconductance gm = ∂ID/∂VGS quantifies how effectively gate voltage controls drain current.
A Zener diode is primarily used in which region of its I-V characteristic?
Answer: Reverse breakdown region
Zener diodes are designed to operate in reverse breakdown, maintaining a nearly constant voltage.
In an n-channel JFET, pinch-off occurs when the gate-source voltage VGS equals:
Answer: The pinch-off voltage VP (negative)
Pinch-off in a JFET occurs when VGS equals the negative pinch-off voltage VP, fully depleting the channel.
The minority carrier lifetime in a semiconductor determines:
Answer: How long excess carriers exist before recombination
Minority carrier lifetime τ is the average time excess minority carriers survive before recombining with majority carriers.
Which type of transistor configuration provides both current gain and voltage gain?
Answer: Common emitter
The common emitter configuration provides both voltage gain (>1) and current gain (β), making it most widely used for amplification.