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Semiconductor Devices and Circuits Flashcards

7 cards from real BEE practice questions. Tap to flip, then mark Knew It or Still Learning — missed cards come back until you master them.

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  1. In a differential amplifier with a tail current source ITAIL, increasing ITAIL primarily affects which parameter?

    Answer: Transconductance gm and thus differential gain

    Each transistor's bias current is ITAIL/2, so increasing ITAIL raises gm = IC/VT and therefore increases the differential voltage gain.

  2. The Miller effect in an inverting amplifier stage causes the input capacitance to appear as:

    Answer: Cgd × (1 + |Av|)

    By Miller's theorem, a feedback capacitance Cgd appears at the input multiplied by (1 + |Av|), significantly increasing effective input capacitance.

  3. What type of semiconductor material results when silicon is doped with phosphorus?

    Answer: n-type, with electrons as majority carriers

    Phosphorus has five valence electrons; donating one to the lattice creates a free electron, making the silicon n-type.

  4. In a cascode amplifier topology, placing a common-gate (or common-base) stage above a common-source (or common-emitter) stage primarily provides:

    Answer: Increased output resistance and reduced Miller effect for wider bandwidth

    The cascode's common-gate stage shields the input transistor from drain voltage swings, suppressing the Miller effect and raising output resistance, extending bandwidth.

  5. A tunnel diode exhibits negative differential resistance (NDR) because of which quantum mechanical phenomenon?

    Answer: Quantum tunneling of carriers through a very thin junction barrier

    In heavily doped tunnel diodes, electrons quantum-mechanically tunnel through the thin junction, producing a current peak followed by an NDR region.

  6. For a PMOS transistor to operate in the saturation region, which condition must be satisfied?

    Answer: VSD ≥ VSG − |VTP|

    For a PMOS in saturation, VSD ≥ VSG − |VTP|, which ensures the channel is pinched off at the drain end.

  7. The transit frequency fT of a BJT is defined as the frequency at which the common-emitter current gain β drops to:

    Answer: Unity (1)

    The transit frequency fT is defined as the frequency where the magnitude of the common-emitter short-circuit current gain equals 1.

Semiconductor Devices and Circuits Flashcards — BEE Study Cards with Answers